???`? ? ?? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ? .. ounting orque usbar to ain erminal ? . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 1200a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 1200ma nput apacitance = 10v, = 0v,= 1mh 100,000 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 0.5 g = 0.33 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 1200a, = 0v . . r g everse ecovery ime = 1200a, = -10v i/t= 2400a/s . . ? . . . hermal mpedance iode th(j-c) junction to case . 110 130 4 - m6 2 - m4 2 - m8 19.5 26.25 12.3 12.3 5 33.5 110 130 22 13 30 36 cl cl e c e g 12 25 7 30 20 9 label (c) 1 2 (e) 4 (e) 3 (g)
???`? ?? . 0246810 0 400 800 1200 1600 2000 2400 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 1200a i c =600a 2400a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =600a 1200a 2400a t c =125 0 2 4 6 8 10 12 14 16 0 2000 4000 6000 8000 10000 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =0.5 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 200 500 1000 2000 5000 10000 20000 50000 100000 200000 500000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0 200 400 600 800 1000 1200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g = 0.33 v ge =15v t c =25
???`? ?? 0.1 0.2 0.5 1 2 5 10 20 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =1200a v ge =15v t c =25 tf tr ton toff 01234 0 400 800 1200 1600 2000 2400 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 1200 2400 3600 4800 6000 7200 100 200 500 1000 2000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i f =1200a t c =25 i rrm trr 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 1x10 -4 2x10 -4 5x10 -4 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 time t (s) transient thermal impedance rth (j-c) (/w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt 0 400 800 1200 1600 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 2000 5000 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =0.33 v ge =15v t c Q125
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